SINHA, ARUN KUMAR
 Distribuzione geografica
Continente #
EU - Europa 1.200
AS - Asia 126
NA - Nord America 100
Continente sconosciuto - Info sul continente non disponibili 14
SA - Sud America 7
AF - Africa 1
Totale 1.448
Nazione #
IT - Italia 1.177
US - Stati Uniti d'America 93
SG - Singapore 50
CN - Cina 32
VN - Vietnam 21
BD - Bangladesh 8
FR - Francia 8
HK - Hong Kong 7
BR - Brasile 4
DE - Germania 4
CA - Canada 3
IN - India 3
CH - Svizzera 2
CR - Costa Rica 2
ES - Italia 2
GB - Regno Unito 2
IE - Irlanda 2
AR - Argentina 1
BO - Bolivia 1
EC - Ecuador 1
EE - Estonia 1
GT - Guatemala 1
IQ - Iraq 1
IS - Islanda 1
JO - Giordania 1
LA - Repubblica Popolare Democratica del Laos 1
MA - Marocco 1
MX - Messico 1
NL - Olanda 1
PK - Pakistan 1
SA - Arabia Saudita 1
Totale 1.434
Città #
Genova 725
Genoa 280
Vado Ligure 79
Rapallo 77
San Jose 25
Singapore 21
Ashburn 10
Bordighera 8
Ho Chi Minh City 8
Beijing 7
Hong Kong 7
Lauterbourg 7
Frankfurt am Main 4
New York 4
Fort Lauderdale 3
Biên Hòa 2
Buffalo 2
Charlotte 2
Council Bluffs 2
Dublin 2
Hanoi 2
Los Angeles 2
Memphis 2
Nashville 2
San Francisco 2
San José 2
Santa Clara 2
South Jordan 2
Tianjin 2
Zurich 2
Amman 1
Amsterdam 1
Baltimore 1
Boscoreale 1
Burlington 1
Cambridge 1
Campinas 1
Chatham 1
Chicago 1
City of London 1
Cuauhtémoc 1
Da Lat 1
Da Nang 1
Daytona Beach 1
Florence 1
Florissant 1
Guatemala City 1
Gujrat 1
High Point 1
Houston 1
Hải Dương 1
Itapemirim 1
Jackson 1
La Paz 1
Laval 1
Louisville 1
Milwaukee 1
Montreal 1
Moreno 1
Mount Clemens 1
Naples 1
Nasiriyah 1
Ontario 1
Paris 1
Peruíbe 1
Poplar 1
Quito 1
Reus 1
Reykjavik 1
Richmond 1
Rimini 1
Riyadh 1
Rome 1
Saginaw 1
Salvador 1
Stamford 1
Tallahassee 1
Tallinn 1
Tangier 1
Thái Nguyên 1
Tây Ninh 1
Valladolid 1
Vientiane 1
Wake Forest 1
West Palm Beach 1
Yuma 1
Totale 1.351
Nome #
Bias circuit design for POSFET based tactile sensing devices 176
Higgs Physics at the HL-LHC and HE-LHC 176
A Novel Method to Size Resistance for Biasing the POSFET Sensors in Common Drain ConfigurationSensors and Microsystems 169
Design of an advanced signal conditioning unit for sensor with reduced off-the-shelf components 168
A scheme for measuring and extracting level-1 parameter of FET device applied toward POSFET sensors array 161
Exploring vulnerability of POSFETs 156
An approach to realize high value resistance using PMOS device at weak inversion for POSFET sensor 151
An energy harvesting chip designed to extract maximum power from a TEG 147
Designing high-value resistive network using weak inversion region of a PMOS device at the floating gate of a sensor 144
Totale 1.448
Categoria #
all - tutte 4.465
article - articoli 453
book - libri 0
conference - conferenze 3.507
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 505
Totale 8.930


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022115 0 0 16 8 9 9 7 29 5 10 4 18
2022/202399 9 14 0 20 12 15 0 4 9 2 12 2
2023/202455 2 6 0 14 2 4 6 9 0 0 7 5
2024/2025183 8 20 9 8 26 10 14 31 11 13 15 18
2025/2026332 65 17 14 15 58 27 47 12 12 29 13 23
2026/202740 25 11 4 0 0 0 0 0 0 0 0 0
Totale 1.448