SINHA, ARUN KUMAR
 Distribuzione geografica
Continente #
EU - Europa 1.199
AS - Asia 121
NA - Nord America 88
SA - Sud America 7
AF - Africa 1
Totale 1.416
Nazione #
IT - Italia 1.176
US - Stati Uniti d'America 84
SG - Singapore 50
CN - Cina 32
VN - Vietnam 21
FR - Francia 8
BD - Bangladesh 7
HK - Hong Kong 7
BR - Brasile 4
DE - Germania 4
CH - Svizzera 2
ES - Italia 2
GB - Regno Unito 2
IE - Irlanda 2
AR - Argentina 1
BO - Bolivia 1
CA - Canada 1
CR - Costa Rica 1
EC - Ecuador 1
EE - Estonia 1
GT - Guatemala 1
IQ - Iraq 1
IS - Islanda 1
JO - Giordania 1
MA - Marocco 1
MX - Messico 1
NL - Olanda 1
PK - Pakistan 1
SA - Arabia Saudita 1
Totale 1.416
Città #
Genova 725
Genoa 280
Vado Ligure 79
Rapallo 77
San Jose 25
Singapore 21
Ashburn 10
Bordighera 8
Ho Chi Minh City 8
Beijing 7
Hong Kong 7
Lauterbourg 7
Frankfurt am Main 4
New York 4
Biên Hòa 2
Buffalo 2
Charlotte 2
Council Bluffs 2
Dublin 2
Hanoi 2
Los Angeles 2
Memphis 2
Nashville 2
Santa Clara 2
South Jordan 2
Tianjin 2
Zurich 2
Amman 1
Amsterdam 1
Baltimore 1
Boscoreale 1
Burlington 1
Cambridge 1
Campinas 1
Chatham 1
Chicago 1
City of London 1
Cuauhtémoc 1
Da Lat 1
Da Nang 1
Florence 1
Florissant 1
Guatemala City 1
Gujrat 1
High Point 1
Hải Dương 1
Itapemirim 1
Jackson 1
La Paz 1
Louisville 1
Milwaukee 1
Moreno 1
Naples 1
Nasiriyah 1
Ontario 1
Paris 1
Peruíbe 1
Poplar 1
Quito 1
Reus 1
Reykjavik 1
Richmond 1
Rimini 1
Riyadh 1
Rome 1
Salvador 1
San Francisco 1
San José 1
Stamford 1
Tallahassee 1
Tallinn 1
Tangier 1
Thái Nguyên 1
Tây Ninh 1
Valladolid 1
Wake Forest 1
West Palm Beach 1
Yuma 1
Totale 1.339
Nome #
Bias circuit design for POSFET based tactile sensing devices 176
Higgs Physics at the HL-LHC and HE-LHC 173
Design of an advanced signal conditioning unit for sensor with reduced off-the-shelf components 167
A Novel Method to Size Resistance for Biasing the POSFET Sensors in Common Drain ConfigurationSensors and Microsystems 165
A scheme for measuring and extracting level-1 parameter of FET device applied toward POSFET sensors array 160
Exploring vulnerability of POSFETs 153
An approach to realize high value resistance using PMOS device at weak inversion for POSFET sensor 147
An energy harvesting chip designed to extract maximum power from a TEG 146
Designing high-value resistive network using weak inversion region of a PMOS device at the floating gate of a sensor 143
Totale 1.430
Categoria #
all - tutte 4.298
article - articoli 437
book - libri 0
conference - conferenze 3.375
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 486
Totale 8.596


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022119 1 3 16 8 9 9 7 29 5 10 4 18
2022/202399 9 14 0 20 12 15 0 4 9 2 12 2
2023/202455 2 6 0 14 2 4 6 9 0 0 7 5
2024/2025183 8 20 9 8 26 10 14 31 11 13 15 18
2025/2026332 65 17 14 15 58 27 47 12 12 29 13 23
2026/202722 22 0 0 0 0 0 0 0 0 0 0 0
Totale 1.430