Short-Wave Infrared InAs Quantum-Dot Light-Emitting Diodes with Tunable Electroluminescence beyond 1.4 μm

Short-wave infrared (SWIR) optoelectronics based on colloidal quantum dots (QDs) have been dominated by heavy-metal chalcogenides for many years (e.g., PbS, HgTe). Here, we present Restriction of Hazardous Substances-compliant InAs/ZnSe core/shell QD light-emitting diodes (LEDs) operating in the SWIR spectral range. The InAs cores are synthesized via a tris(dimethylamino)arsine-based continuous-injection method, enabling size control and SWIR spectral tuning. The LEDs employ a hybrid charge-injection stack comprising organic hole-transport layers (poly-TPD/PTAA) and an inorganic ZnMgO electron-transport layer to balance injection into the InAs/ZnSe core/shell QD film. Four different LEDs, with electroluminescence (EL) peaks centered at 1007, 1275, 1300, and 1410 nm, achieve external peak quantum efficiencies of 6.20%, 3.75%, 2.04%, and 1.10%, respectively. This work is the first demonstration of EL from InAs QDs beyond 1100 nm, advancing III-V QDs for SWIR optoelectronic systems in fields such as machine vision and bioimaging.